APTGU30H120T3 APTGU30H120T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 1 - 6 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 45 i c continuous collector current t c = 80c 30 i cm pulsed collector current t c = 25c 105 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 208 w rbsoa reverse bias safe operating area t j = 150c 105a @ 960v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. q3 11 10 q1 cr1 7 22 13 14 cr 3 3 30 29 32 18 19 23 8 15 31 r1 16 4 cr4 cr2 q2 q4 26 27 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? v ces = 1200v i c = 30a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? power mos 7 ? punch through (pt) igbt - low co nd uctio n loss - ul tra fast tail current shutoff - low gate c harge - switching frequency capability in the 200khz range - soft recovery parallel diodes - low diode vf ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design ? internal thermistor for temperature monitoring ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq uenc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? each leg can be easily paralleled to achieve a phase leg of twice the current capability f ull - bridge p t igbt power module
APTGU30H120T3 APTGU30H120T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 2 - 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 250a 1200 v t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 2500 a t j = 25c 3.3 3.9 v ce(on) collector emitter on voltage v ge =15v i c = 30a t j = 125c 3.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 1 ma 3 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3240 c oes output capacitance 248 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 31 pf q g total gate charge 150 q ge gate ? emitter charge 21 q gc gate ? collector charge v ge = 15v v bus = 600v i c = 30a 62 nc t d(on) tur n-o n delay ti me 16 t r rise time 20 t d(off) turn-off delay time 94 t f fall time 40 ns e on1 turn-on switching energy 750 e on2 tur n-o n switchi ng energy x 1305 e off turn-off switching energy y inductive switching (25c) v ge = 15v v bus = 600v i c = 30a r g = 5 ? 680 j t d(on) tur n-o n delay ti me 16 t r rise time 20 t d(off) turn-off delay time 147 t f fall time 75 ns e on1 turn-on switching energy 750 e on2 tur n-o n switchi ng energy x 2132 e off turn-off switching energy y inductive switching (125c) v ge = 15v v bus = 600v i c = 30a r g = 5 ? 1744 j x e on2 includes diode reverse recovery y in accordance with jedec standard jesd24-1 temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k ? b 25/85 t 25 = 298.16 k 4080 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 t: thermistor temperature r t : thermistor value at t
APTGU30H120T3 APTGU30H120T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 3 - 6 reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f(a v) maximum average forward current 50% duty cycle tc = 80c 25 a t j = 25c 2.3 2.8 v f diode forward voltage i f = 25a v ge = 0v t j = 125c 1.8 v t rr reverse recovery time t j = 125c 0.13 s t j = 25c 2.3 q rr reverse recovery charge i f = 25a v r = 600v di/dt =800a/s t j = 125c 6 c thermal and package characteristics symbol characteristic min typ max unit igbt 0.6 r thjc junction to case diode 1 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 4.7 n.m wt package weight 110 g package outline 17 12 28 1
APTGU30H120T3 APTGU30H120T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 4 - 6 typical performance curve output characteristics (v ge =1 5v) t c =25c t c =125c 0 20 40 60 80 012345 ic, collector current (a) v ce , collector to emitter volta g e ( v ) 250s pulse test < 0.5% dut y c y cle gate charge v ce =240v v ce =6 00 v v ce =960v 0 2 4 6 8 10 12 14 16 18 0 20 40 60 80 100 120 140 160 gate charge (nc) v ge , gate to emitter voltage (v) i c = 30a t j = 25 c 0 10 20 30 40 50 60 70 -50 0 50 100 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) breakdown voltage vs junction temp. collector to emitter breakdown voltage (normalized) i c =6 0a i c =3 0a i c =15a 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 25 50 75 100 125 t j , junction temperature (c) on state voltage vs junction temperature v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle v ge = 1 5v i c =60a i c =3 0a i c =15a 0 1 2 3 4 5 6 6 8 10 12 14 16 v ge , g ate to emitter vo ltage (v) v ce , collector to emitter voltage (v) on state voltage vs gate to emitter volt. t j = 25c 250s pulse test < 0.5% duty cycle output characteristics (v ge =10v) t c =2 5 c t c =125c 0 20 40 60 80 012345 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0. 5% dut y c y cle transfer characteristics t j =25c t j =-55c t j =125c 0 20 40 60 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle
APTGU30H120T3 APTGU30H120T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 5 - 6 eon 2, 60 a eoff, 60a eon2, 30a eoff, 30a eon2, 15a eoff, 15a 0 2 4 6 0 255075100125 t j , junction temperature (c) switching energy losses (mj) switching energy losses vs junction temp. v ce = 600v v ge = 15v r g = 5 ? eon2, 60a eoff, 60a eon2, 30a eoff, 30a eon2, 15a eoff, 15a 0 2 4 6 8 0 204060 gate resistance (ohms) switching energy losses (mj) switching energy losses vs gate resistance v ce = 600v v ge = 15v t j = 125c t j = 25c 0 1 2 3 4 0 20406080 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current t j =125c v ce = 600v v ge = 1 5v r g = 5 ? t j =25c, v ge =15v t j =25c, v ge =10v t j =125c, v ge =15v t j =125c, v ge =10v 0 1 2 3 4 5 0 20406080 i ce , collector to emitter current (a) turn-on energy loss vs collector current e on 2 , turn-on energy loss (mj) v ce = 600v r g = 5 ? t j = 25c 0 20 40 60 80 100 0 20406080 i ce , collector to emitter current (a) tf, fall time (ns) t j =125c current fall time vs collector current v ce = 600v, v ge = 1 5v, r g = 5 ? v ge =1 5v v ge =10v 0 20 40 60 0 20406080 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 600v r g = 5 ? v ge =15v, t j =25c v ge =10v, t j =25c v ge =15v, t j =125c v ge =10v, t j =125c 0 40 80 120 160 200 0 20406080 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 600v r g = 5 ? 0 10 20 30 40 0 20406080 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current v ge =10v v ge =15v t j = 25c v ce = 600v r g = 5 ?
APTGU30H120T3 APTGU30H120T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 6 - 6 hard sw itching zcs zvs 0 40 80 120 160 200 0 1020304050 i c , collector current (a) fmax, operating frequency (khz) operating frequency vs collector current v ce = 600v d = 50% r g = 5 ? t j = 125c t c = 75c maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 rectangular pulse duration (seconds) thermal impedance (c/w) 0 20 40 60 80 100 120 0 200 400 600 800 1000 i c , collector current (a) v ce , collector to emitter voltage (v) minimum switching safe operating area ci es cres coes 10 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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